• image of FET、MOSFET 阵列>ALD1101PAL
  • image of FET、MOSFET 阵列>ALD1101PAL
ALD1101PAL
MOSFET 2N-CH 10.6V 8DIP
-
管子
50
:
:

1

$9.2400

$9.2400

50

$7.3696

$368.4800

100

$6.5968

$659.6800

500

$5.8240

$2,912.0000

1000

$5.2416

$5,241.6000

2000

$4.9056

$9,811.2000

image of FET、MOSFET 阵列>ALD1101PAL
image of FET、MOSFET 阵列>ALD1101PAL
ALD1101PAL
ALD1101PAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10.6V 8DIP
-
管子
85
1
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列-
包裹管子
产品状态ACTIVE
包装/箱8-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
Rds On(最大)@Id、Vgs75Ohm @ 5V
Vgs(th)(最大值)@Id1V @ 10µA
供应商设备包8-PDIP
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