• image of 记忆>BY25Q80BSSIG(R)
  • image of 记忆>BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
8 MBIT, 3.0V (2.7V TO 3.6V), -40
-
卷带式 (TR)
2000
:
:

1

$0.5264

$0.5264

10

$0.4480

$4.4800

25

$0.4256

$10.6400

100

$0.3360

$33.6000

250

$0.3136

$78.4000

500

$0.2688

$134.4000

1000

$0.2016

$201.6000

2000

$0.1904

$380.8000

6000

$0.1792

$1,075.2000

10000

$0.1680

$1,680.0000

50000

$0.1456

$7,280.0000

image of 记忆>BY25Q80BSSIG(R)
image of 记忆>BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
记忆
BYTe Semiconductor
8 MBIT, 3.0V (2.7V TO 3.6V), -40
-
卷带式 (TR)
4000
1
产品参数
PDF(1)
类型描述
制造商BYTe Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-SOIC (0.209", 5.30mm Width)
安装类型Surface Mount
内存大小8Mbit
内存类型Non-Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.7V ~ 3.6V
技术FLASH - NOR (SLC)
时钟频率108 MHz
内存格式FLASH
供应商设备包8-SOP
写入周期时间 - 字、页50µs, 2.4ms
内存接口SPI - Quad I/O, QPI
存取时间7 ns
记忆组织1M x 8
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